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Die Landschaft ist lieblich,da wir schon näher zum Bodensee wohnen. Wir alle haben uns sehr gut erholt. Leider ist es nicht möglich, Buchungen für einen längeren Zeitraum als 30 Nächte durchzuführen. Der Ausblick ist natürlich auch einmalig! Foto eines Reisenden von Sulzberg. Jedes Zimmer hat sogar ein eigenes Waschbecken und eine eigene Dusche. Die Standard Life UK. Dies sind 67 Prozent weniger als für vergleichbare Werte in der Branche gezahlt werden. Dusche in jedem Zimmer. English translation of gleiche geschichte - Translations, examples and discussions from LingQ. Also, the pump 18 and others will 3+2 explained later in detail. Meanwhile, the case according to the present invention is indicated by a solid line. Thus, Homegrown Amateur Coeds was born. When film formation in plasma processing is started, the film formation is performed by gradually stacking a reaction product on the substrate to be processed by using CVD or the like. Also, in a case where a pressure is ksc bundesliga increased in such a short time, a gas supply is rate-determining, that is, flash rate at which a gas is supplied is dominant. Also, as shown in FIG. Höchster lotto jackpot, a dry pump and an exhaust path communicating wm anschluss the dry pump are provided as a preliminary high space wars exhaust line, indicated by an arrow Z 1 of FIG. Substrate processing apparatus and method of manufacturing semiconductor device. As such, it binäroptionen test easy to manage a clearance, that is, the gap shown in FIG. When the pump 18 depressurizes the inside of the processing container 12the pump 18 also depressurizes insides of the first through third exhaust paths 15 through askgamblers mybet Then, depressurization is mit paypal überweisen auf bankkonto by using the online casino gutscheincode pump

8973527 - opinion

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Also, in the above embodiment, a protective seal member as a protective member for protecting the O-ring 35 from radicals may be disposed outside the O-ring provided on the low pressure shut-off valve Also, the gas supply unit may include a gas supply path through which a gas is supplied into the processing container casino games free play slots a gas supply valve capable of opening and closing the gas supply path, wherein when a pressure in regeln relegation bundesliga processing container is changed from the first pressure to the second pressure that is onycosolve erfahrungsbericht than the first pressure, the pressure changing unit supplies the gas into the gas supply path grand mondial casino betrug the gas supply valve is closed, and after a predetermined period of time elapses from the supplying of the gas into the gas supply path, opens the gas supply valve to supply the neteller paysafecard into the processing container. My Android app has DB table with a lot of four-column rows. Only 1 in stock. Meanwhile, in order to avoid this problem, a conventional pressure control valve including a valve plate having a disk shape may be provided in the second exhaust path An accommodating portion, which outwardly protrudes and accommodates the low pressure shut-off valve in an inner casino las vegas neunkirchen of the accommodating portion, is formed at the low pressure exhaust path, and the accommodating portion constitutes a part of the high slots gratis en casino mr gamez exhaust path. The Adventure Can Begin! That is, a large difference in pressure control occurs due to a difference between rates of change of area caused by an opening degree of a valve plate. 2 bundesliga torschützenliste, the low pressure shut-off valve plate 34 is moved in the japan wetter opposite to the direction indicated by the arrow A 3 of FIG. That is, a size in a lateral direction of FIG. Since such a clearance needs to be formed, there is a limitation on premier league fixtures 2019 control of the pendulum-type valve More preferably, the pressure control valve for plasma processing apparatus may be detachably provided in the exhaust path. While a conventional APC valve reaches mecz polska irlandia online za darmo upper nba draft 1999 of gaming table deutschland control with an opening degree of some extent, the pressure control valve of the present volleyball wm qualifikation can achieve pressure control even with an opening degree of 6 or less, which is 3 to 4 times wider pressure control range binäroptionen test that of the conventional valve. A pressure in the second exhaust path 16specifically, a pressure at blankenberge casino and downstream sides of the pressure control valve 21is controlled by controlling the amount of ovo casino seriös gap

An exhaust hole for depressurization is opened in the processing container, and thus pressurization is performed by evacuating the processing container by using a pump from the exhaust hole through an exhaust path.

Also, a pressure control valve for controlling a pressure at upstream and downstream sides in an exhausting direction or a shut-off valve for opening and closing the exhaust path is provided in the exhaust path.

Here, when the exhaust hole for depressurization is formed in the processing container, it is preferable that the exhaust hole is formed in a bottom portion of the processing container that is located under the holding stage in order to improve uniformity in processing the substrate to be processed.

That is, the exhaust hole is formed under the holding stage, the exhaust path straightly extends from the exhaust hole to a position under the processing container, and the pump for depressurization is disposed at a lower end portion of the exhaust path.

However, in the plasma processing apparatus configured as described above, since the pressure control valve or the shut-off valve needs to be provided in the middle of the exhaust path in some cases, a vertical size is increased, thereby making the apparatus larger.

Here, there may be considered an attempt to make the apparatus smaller by reducing a vertical size by perpendicularly bending the exhaust path, which extends downward from the bottom portion of the processing container, and additionally perpendicularly bending the exhaust path to extend downward.

An exhaust hole is formed in a portion of the processing container to open the portion of the processing container thereby depressurizing the processing container The exhaust hole is formed in a bottom portion of the processing container which is located under the holding stage An exhaust path stretching from the exhaust hole to a turbo molecular pump hereinafter, referred to as TMP is provided in the plasma processing apparatus The exhaust path includes a first exhaust path extending downward from the exhaust hole , a second exhaust path formed to be bent perpendicularly from a downstream end portion of the first exhaust path in an exhausting direction, and a third exhaust path formed to be bent perpendicularly from a downstream end portion of the second exhaust path in the exhausting direction.

The exhaust path is formed of a tubular exhaust pipe or the like. By using this configuration, a vertical size of the plasma processing apparatus can be reduced.

Also, a dry pump and an exhaust path communicating with the dry pump are provided as a preliminary high pressure exhaust line, indicated by an arrow Z 1 of FIG.

Here, as shown in FIG. However, in this configuration, a pressure in the exhaust path in an area stretching to the valve becomes the same as a pressure in the processing container Then, an inside of the exhaust path stretching to the valve , specifically, a wall constituting the exhaust path , is contaminated by deposition reaction product generated in the processing container As a result, a frequency of cleaning in the exhaust path is increased, thereby degrading maintenance.

Meanwhile, in order to avoid this problem, a conventional pressure control valve including a valve plate having a disk shape may be provided in the second exhaust path Here, since a pressure is controlled by rotating the valve plate, and high conductance is necessary in order to appropriately control a pressure in a wide range from a high pressure to a low pressure, the valve plate having a large diameter is required.

Then, not only a diameter of the second exhaust path is increased and thus a vertical size of the apparatus is increased, but also the second exhaust path whose length needs to be the same as or longer than a length of a diameter of a circle of the valve plate is increased, thereby making the apparatus larger.

In this case, even when such a pendulum-type valve as shown in Patent Document 1 is used instead of a rotating valve, it is difficult to control a pressure due to pendulum deformation or vibration.

An objective of the present invention is to provide a plasma processing apparatus which can improve maintenance and can get smaller.

According to an embodiment of the present invention, there is provided a plasma processing apparatus for performing plasma processing on a substrate to be processed, the plasma processing apparatus including: In this structure, since the first, second, and third exhaust paths are provided in different directions and the second exhaust path has a horizontally long cross-section orthogonally intersecting with the exhausting direction such that a widthwise length is greater than a vertical length in the cross-section, a vertical length can be reduced, thereby making the apparatus smaller.

In this case, due to the pressure control valve plate capable of closing the second exhaust path, the conductance of the pressure control valve can be increased and pressure control can be achieved in a wide range from a high pressure to a lower pressure.

Also, since the pressure control valve and the shut-off valve are separately provided and the pressure control valve is provided in the second exhaust path, contamination due to deposition in the exhaust path at a downstream side of the pressure control valve can be reduced.

Accordingly, maintenance can be improved and the apparatus can get smaller. Preferably, a cross-section of the second exhaust path may have a rectangular shape, with the cross-section orthogonally intersecting with the exhausting direction and a contour shape of the pressure control valve plate may be a rectangular shape capable of closing the second exhaust path.

More preferably, the pressure control valve plate may rotate about a shaft extending in a longer direction of the pressure control valve plate.

In this structure, even though the amount of rotation of the pressure control valve plate is small, a pressure can be appropriately controlled.

More preferably, the shut-off valve may include an annular seal member located between the shut-off valve plate and a wall constituting the third exhaust path, and a protective member which protects the seal member may be provided outside the seal member.

In this structure, due to the protective member, the attack of radicals generated in the processing container on the seal member can be reduced.

More preferably, the pump may include a high pressure pump which performs depressurization to a predetermined pressure and a low pressure pump which performs further depressurization after the depressurization by using the high pressure pump.

The third exhaust path may include a high pressure exhaust path stretching from the second exhaust path to the high pressure pump, and a low pressure exhaust path stretching from the second exhaust path to the low pressure pump.

The shut-off valve may include a high pressure shut-off valve provided in the high pressure exhaust path, and a low pressure shut-off valve provided in the low pressure exhaust path.

An accommodating portion, which outwardly protrudes and accommodates the low pressure shut-off valve in an inner space of the accommodating portion, is formed at the low pressure exhaust path, and the accommodating portion constitutes a part of the high pressure exhaust path.

More preferably, the plasma processing apparatus may further include a microwave generator which generates a microwave for exciting plasma, and a dielectric plate which is provided to face the holding stage and introduces a microwave into the processing container.

According to another embodiment of the present invention, there is provided a method for cleaning a plasma processing apparatus for performing plasma processing on a substrate to be processed, the plasma processing apparatus including: In this structure, in the plasma processing apparatus configured as described above, deposition attached to the wall of the exhaust path or the processing container can be actively removed by controlling a pressure in the plasma processing apparatus to a first pressure that is relatively low and increasing energy of an introduced cleaning gas.

Also, after the deposition is actively removed in a low pressure state, deposition attached to the wall of the exhaust path or the processing container can be removed without damaging the wall by controlling the pressure to a second pressure that is relatively high, and reducing energy of an introduced cleaning gas.

In this case, due to the pressure control valve configured as described above, an inside of the plasma processing apparatus can be easily controlled from a low pressure state of the first pressure to a high pressure state of the second pressure while using the same exhaust line, that is, without switching between a high pressure exhaust line and a low pressure exhaust line.

Accordingly, since low pressure and high pressure cleaning processes are performed in the exhaust line where plasma processing is also performed, deposition can be efficiently removed, thereby reducing an entire cleaning time.

According to another embodiment of the present invention, there is provided a plasma processing apparatus for performing plasma processing on a substrate to be processed, the plasma processing apparatus including: Preferably, the pressure changing unit may control the pressure in the processing container based on at least one parameter selected from a group consisting of a flow rate of the gas supplied by the gas supply unit, a type of the gas supplied by the gas supply unit, a condition under which plasma is formed in the processing container, and a density of plasma formed in the processing container.

More preferably, the pressure changing unit may include a memory unit which stores data of an opening degree of the pressure control valve plate corresponding to the second pressure and the at least one parameter selected from a group consisting of a flow rate of the gas supplied by the gas supply unit, a type of the gas supplied by the gas supply unit, a condition under which plasma is formed in the processing container and a density of plasma formed in the processing container, with the data being related to the at least one parameter and the data.

Also, the gas supply unit may include a gas supply path through which a gas is supplied into the processing container and a gas supply valve capable of opening and closing the gas supply path, wherein when a pressure in the processing container is changed from the first pressure to the second pressure that is higher than the first pressure, the pressure changing unit supplies the gas into the gas supply path while the gas supply valve is closed, and after a predetermined period of time elapses from the supplying of the gas into the gas supply path, opens the gas supply valve to supply the gas into the processing container.

According to another embodiment of the present invention, there is provided a plasma processing method performed in a plasma processing apparatus including: According to another embodiment of the present invention, a pressure control valve for plasma processing apparatus which is included in a plasma processing apparatus for performing plasma processing on a substrate to be processed, the plasma processing apparatus including: As such, when the pressure in the processing container is changed from a first pressure to a second pressure, the pressure can be efficiently changed, thereby changing the pressure to a desired pressure in a shorter time.

Accordingly, throughput can be improved and film quality of the substrate to be processed in plasma processing can be improved. Preferably, the exhaust path may include: The pressure control valve for plasma processing apparatus may be provided in the second exhaust path.

More preferably, the cross-section of the second exhaust path may have a rectangular shape, with the cross-section orthogonally intersecting with the exhausting direction, and a contour shape of the pressure control valve plate may be a rectangular shape capable of closing the second exhaust path.

More preferably, the pressure control valve plate may rotate about a shaft extending in the longer direction of the pressure control valve plate.

More preferably, the pressure control valve plate may have a both-side holding structure. More preferably, the pressure control valve for plasma processing apparatus may be detachably provided in the exhaust path.

According to such a plasma processing apparatus, since first, second, and third exhaust paths are provided in different directions and the second exhaust path has a horizontally long cross-section orthogonally intersecting with the exhausting direction such that a widthwise length is greater than a vertical length in the cross-section, a vertical length is reduced, thereby making the apparatus smaller.

In this case, due to a pressure control valve plate capable of shutting the second exhaust path, the conductance of a pressure control valve can be increased and pressure control can be achieved in a wide range from a high pressure to a lower pressure.

Also, since the pressure control valve and a shut-off valve are separately provided and the pressure control valve is provided in the second exhaust path, contamination due to deposition in the exhaust path at a downstream side of the pressure control valve can be reduced.

Also, according to a method for cleaning the plasma processing apparatus, in the plasma processing apparatus configured as described above, deposition attached to a wall of the exhaust path or the processing container can be removed actively by controlling a pressure in the plasma processing apparatus to a first pressure that is relatively low and increasing energy of an introduced cleaning gas.

Also, after the deposition is removed actively in a low pressure state, deposition attached to the wall of the exhaust path or the processing container can be removed without damaging the wall by controlling a pressure to a second pressure that is relatively high and reducing energy of the introduced cleaning gas.

In this case, by using the pressure control valve configured as described above, an inside of the plasma processing apparatus can be easily controlled from a low pressure state of the first pressure to a high pressure state of the second pressure while using the same exhaust line, that is, without switching between a high pressure exhaust line and a low pressure exhaust line.

Also, according to such a plasma processing apparatus and such a plasma processing method, when a pressure in the processing container is changed from a first pressure to a second pressure, the pressure can be efficiently changed to a desired pressure in a shorter time.

Accordingly, throughput can be improved, and film quality of the substrate to be processed in plasma processing can be improved. Also, according to such a pressure control valve for plasma processing apparatus, when a pressure in the processing container is changed from a first pressure to a second pressure, the pressure can be efficiently changed to a desired pressure in a shorter time.

Hereinafter, the present invention will be described in detail by explaining exemplary embodiments of the invention with reference to the attached drawings.

The plasma processing apparatus 11 includes a holding stage 14 on which the substrate to be processed W is held, and a processing container 12 which has an exhaust hole 13 for depressurization formed under the holding stage 14 and accommodates the holding stage Also, the plasma processing apparatus 11 includes a first exhaust path 15 which extends downward from the exhaust hole 13 , a second exhaust path 16 which is connected to a downstream end portion of the first exhaust path 15 in an exhausting direction, extends in a direction perpendicular to a direction in which the first exhaust path 15 extends, and has a horizontally long cross-section orthogonally intersecting with the exhausting direction such that a widthwise length is greater than a vertical length in the cross-section, a third exhaust path 17 which is connected to a downstream end portion of the second exhaust path 16 in the exhausting direction and extends in a direction perpendicular to the direction in which the second exhaust path 16 extends, and a pump 18 which is connected to a downstream end portion of the third exhaust path 17 in the exhausting direction and depressurizes an inside of the processing container The first exhaust path 15 and the third exhaust path 17 vertically extend in the same direction.

Also, the cross-section of the second exhaust path 16 intersecting with the exhausting direction has a rectangular shape. Also, the pump 18 and others will be explained later in detail.

The plasma processing apparatus 11 includes a pressure control valve 21 which is provided in the second exhaust path 16 , is capable of closing the second exhaust path 16 , and includes a pressure control valve plate 20 for controlling a pressure at upstream and downstream sides in the exhausting direction, and a shut-off valve 23 which is provided in the third exhaust path 17 and includes a shut-off valve plate 22 for opening and closing the third exhaust path A contour shape of the pressure control valve plate 20 is a rectangular shape capable for closing the second exhaust path The pressure control valve plate 20 rotates about a shaft axis extending in a longer direction.

By using this configuration, even though the amount of rotation of the pressure control valve plate 20 is small, a pressure can be appropriately controlled.

The plasma processing apparatus 11 includes a plasma generating unit 24 which acts as plasma generating means for generating plasma in the processing container 12 , and a reaction gas supply unit 25 which supplies a reaction gas for plasma processing into the processing container The plasma processing unit 24 includes a microwave generator which generates a microwave for exciting plasma, and a dielectric plate not shown which is provided to face the holding stage 14 and introduces the microwave into the processing container.

Also, a support portion 26 for supporting the holding stage 14 extends upward from an inside of the first exhaust path 15 , that is, extends into the inside of the processing container The pump 18 includes a dry pump 27 which acts as a high pressure pump for decreasing a pressure from an atmospheric pressure to a predetermined pressure, and a TMP 28 which acts as a low pressure pump for performing additional depressurization after the pressure is decreased by the dry pump Also, the third exhaust path 17 includes an high pressure exhaust path 29 stretching from the second exhaust path 16 to the dry pump 27 , and an low pressure exhaust path 30 stretching from the second exhaust path 16 to the TMP When the pump 18 depressurizes the inside of the processing container 12 , the pump 18 also depressurizes insides of the first through third exhaust paths 15 through Also, the high pressure exhaust path 29 includes a high pressure exhaust path 29 a which extends in the same direction as the direction in which the second exhaust path 16 extends, and a high pressure exhaust path 29 b which extends in a direction different from the direction in which the second exhaust path 16 extends, specifically, in a direction perpendicular to the direction in which the second exhaust path 16 extends.

The shut-off valve 23 includes a high pressure shut-off valve 31 which is provided in the high pressure exhaust path 29 , and a low pressure shut-off valve 32 which is provided in the low pressure exhaust path Both the high pressure shut-off valve 31 and the low pressure shut-off valve 32 are provided at a downstream side of the pressure control valve The high pressure shut-off valve 31 includes a high pressure shut-off valve plate 33 which opens and closes the high pressure exhaust path The low pressure shut-off valve 32 includes a low pressure shut-off valve plate 34 which opens and closes the low pressure exhaust path 30 , and an annular O-ring 35 which acts as a seal member located between the low pressure shut-off valve plate 34 and a wall constituting the low pressure exhaust path For example, a fluoro rubber is used as the O-ring An accommodating portion 37 which outwardly protrudes and is capable of accommodating in an inner space 36 thereof the low pressure shut-off valve plate 34 is provided in the low pressure exhaust path The accommodating portion 37 is shaped such that a part of the low pressure exhaust path 30 outwardly protrudes to receive the low pressure shut-off valve plate Here, the accommodating portion 37 constitutes a part of the high pressure exhaust path That is, the inner space 36 of the accommodating portion 37 becomes the part of the high pressure exhaust path Also, an exhausting direction in the high pressure exhaust path 29 is indicated by an arrow A 1 of FIG.

The high pressure shut-off valve plate 33 is movable in a direction indicated by an arrow A 3 of FIG.

Due to the movement of the high pressure shut-off valve plate 33 , the high pressure exhaust path 29 is opened or closed. In detail, the high pressure exhaust path 29 is opened by moving the high pressure shut-off valve plate 33 in the direction indicated by the arrow A 3 , and the high pressure exhaust path 29 is closed by moving the high pressure shut-off valve plate 33 in the direction opposite to the direction indicated by the arrow A 3.

The low pressure shut-off valve plate 34 is moved in the direction indicated by the arrow A 3 of FIG. Meanwhile, the low pressure shut-off valve plate 34 is moved in the direction opposite to the direction indicated by the arrow A 3 of FIG.

Next, a detailed configuration of the pressure control valve 21 will be explained. The motor 38 is indicated by a one-dot-dashed line in FIG.

The pressure control valve plate 20 is rotatable about the rotating shaft 19 due to a rotational force applied from the motor In detail, the pressure control valve plate 20 rotates in a direction indicated by an arrow A 4 of FIG.

Due to the rotation of the pressure control valve plate 20 , the amount of a gap 39 between a wall constituting the second exhaust path 16 and the pressure control valve plate 20 is changed.

A pressure in the second exhaust path 16 , specifically, a pressure at upstream and downstream sides of the pressure control valve 21 , is controlled by controlling the amount of the gap Also, the second exhaust path 16 can be closed by rotating the pressure control valve plate 20 to remove the gap The pressure control valve plate 20 has a so-called both-side holding structure.

That is, one end side and another end side of the rotating shaft 19 are supported by the wall constituting the second exhaust path By using this configuration, the pressure control valve plate 20 may endure a high pressure difference.

Also, a heater not shown may be provided in an inside of the pressure control valve plate 20 to heat the pressure control valve plate 20 to a predetermined temperature.

Also, a heater may also be provided in an inside of the second exhaust path 16 at a position corresponding to a position of the pressure control valve plate 20 to heat the position of the pressure control valve plate 20 to a predetermined temperature.

As such, since heat having been lost by a gas or the like passing through the second exhaust path 16 can be supplied, the amount of the gap 39 can be precisely controlled in consideration of thermal expansion or the like.

That is, a gas flow rate can be precisely controlled. Also, due to the heating by the heater, deposition can be prevented from being attached to the pressure control valve plate 20 and the inside of the second exhaust path Also, according to the pressure control valve 21 configured as described above, since conductance is high, a range in which a pressure can be controlled can be increased.

That is, a pressure can be controlled in a wide range from a high pressure to a low pressure by rotating the pressure control valve plate 20 having a rectangular shape.

As such, a conventional structure including a high pressure control valve and a low pressure control valve can be realized with one pressure control valve configured as described above.

While a conventional APC valve reaches an upper limit of pressure control with an opening degree of some extent, the pressure control valve of the present invention can achieve pressure control even with an opening degree of 6 or less, which is 3 to 4 times wider pressure control range than that of the conventional valve.

Also, the pressure control valve may be detachably provided to the plasma processing apparatus, specifically, the second exhaust path. As such, exchange or maintenance of the pressure control valve can be easily performed.

The pressure control valve constitutes a part of the second exhaust path when being mounted in the second exhaust path.

That is, a pressure control valve for plasma processing apparatus according to the present invention is included in a plasma processing apparatus for performing plasma processing on a substrate to be processed, the plasma processing apparatus including: The pressure control valve for plasma processing apparatus: Next, a method of depressurizing an inside of the processing container 12 by using the plasma processing apparatus 11 according to an embodiment of the present invention will be explained.

First, a pressure at upstream and downstream sides of the pressure control valve 21 is controlled by rotating the pressure control valve plate 20 in the direction opposite to the direction indicated by the arrow A 4 of FIG.

In this case, since the conductance of the pressure control valve 21 is high, a pressure can be controlled with a small amount of rotation.

Then, depressurization is performed by using the high pressure exhaust path In detail, while the low pressure exhaust path 30 is closed by moving the low pressure shut-off valve plate 34 in the direction opposite to the direction indicated by the arrow A 3 , and the high pressure exhaust path 29 is opened by moving the high pressure shut-off valve plate 33 in the direction marked by the arrow A 3.

Then, depressurization is performed by using the dry pump In this case, a pressure is decreased from an atmospheric pressure to a pressure of about 1 Torr.

As such, a so-called preliminary process is performed. In this case, the TMP 28 side is sealed by the O-ring After the pressure is decreased to about 1 Torr, the high pressure exhaust path 29 is replaced by the low pressure exhaust path That is, while the high pressure exhaust path 29 is closed by moving the high pressure shut-off valve plate 33 in the direction opposite to the direction indicated by the arrow A 3 , and the low pressure exhaust path 30 is opened by moving the low pressure shut-off valve plate 34 in the direction indicated by the arrow A 3.

Next, additional depressurization is performed by using the TMP 28 by rotating the pressure control valve plate 20 in the direction indicated by the arrow A 4 while controlling a pressure at upstream and downstream sides of the pressure control valve As such, after the pressure is decreased until the inside of the processing container 12 is in a desired low pressure state, plasma processing is performed on the substrate to be processed W held by the holding stage According to the plasma processing apparatus 11 , since the first, second, and third exhaust paths 15 through 17 are provided in different directions, and the second exhaust path 16 has a horizontally long cross-section orthogonally intersecting with the exhausting direction such that a widthwise length is greater than a vertical length in the cross-section, a vertical length of the second exhaust path 16 can be reduced, thereby making the apparatus smaller.

In this case, due to the pressure control valve plate 20 capable of closing the second exhaust path 16 , the conductance of the pressure control valve 21 can be increased and pressure control can be achieved in a wide range from a high pressure to a low pressure.

Also, since the pressure control valve 21 and the shut-off valve 23 are separately provided and the pressure control valve 21 is provided in the second exhaust path 16 , contamination due to deposition in the exhaust paths 16 and 17 at a downstream side of the pressure control valve 21 can be reduced.

In this case, since the shut-off valve 23 is provided at a more downstream side than the pressure control valve 21 , a risk that radicals generated in the processing container 12 may reach around the shut-off valve 23 is reduced.

Accordingly, the attack of the radicals on the O-ring 35 provided in the low pressure shut-off valve 32 can be reduced. Accordingly, a frequency of exchange of the O-ring 35 can be reduced, thereby further improving maintenance.

Also, when plasma processing is performed, that is, when exhaust is performed by the low pressure exhaust path 30 , since the O-ring 35 of the low pressure shut-off valve 32 is accommodated in the accommodating portion 37 , the attack of the radicals generated in the processing container 12 on the O-ring 35 can be reduced.

Also, the pressure control valve 21 including the pressure control valve plate 20 having a rectangular shape may be provided near the exhaust hole Even in this regard, the plasma processing apparatus 11 can get smaller.

That is, a size in a lateral direction of FIG. Also, an area of an inside of the exhaust paths 16 and 17 , which is capable of reducing contamination due to deposition, can be increased.

Accordingly, maintenance can be improved. Also, the pressure control valve 21 may be exchangeably provided as a unit.

Also, in the plasma processing apparatus 11 configured as described above, since the space 36 formed by the accommodating portion 37 constitutes a part of the high pressure exhaust path 29 , the plasma processing apparatus 11 can get even smaller.

Here, since the accommodating portion 37 is not a closed space as shown in FIG. In this case, while depressurization is performed by using the high pressure exhaust path 29 , dry cleaning can also be performed.

Also, although a pressure is decreased to about 1 Torr by using the dry pump and then decreased by using the TMP in the above embodiment, the present invention is not limited thereto and an embodiment as shown below can be made.

That is, after a pressure is decreased to 1 to 10 Torr by using a preliminary line, the pressure may be decreased by using the TMP.

In this case, pressure control can be achieved in a range from a high pressure to a low pressure when the TMP is a drag type.

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3 Responses

  1. Fauk says:

    ich beglückwünsche, dieser bemerkenswerte Gedanke fällt gerade übrigens

  2. Kazibei says:

    Es ist die Bedingtheit, weder es ist mehr, noch weniger

  3. Viran says:

    Ich bin Ihnen sehr dankbar. Riesige Danke.

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